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U2893B
Modulation PLL for GSM, DCS and PCS Systems
Description
The U2893B is a monolithic integrated circuit. It is realized using TEMIC's advanced silicon bipolar UHF5S technology. The device integrates a mixer, an I/Q modulator, a phase-frequency detector (PFD) with two synchronous-programmable dividers, and a charge pump. The U2893B is designed for cellular phones such as GSM, DCS1800, and PCS1900, applying a transmitter-architecture where the VCO is operated at the TX output frequency. U2893B exhibits low power consumption, and the powerdown function extends battery life. The IC is available in a shrinked small-outline 28-pin package (SSO28).
Features
D Supply voltage down to 2.7 V D Current consumption 40 mA D Power-down function D Low-current standby mode D High-speed PFD and charge pump D Integrated dividers
Benefits
D D D D D
High-level RF integration TX architecture saves filter costs Low external part count Small SSO28 package One device for various applications
Block Diagram
MDLO I NI Q NQ PUMIX PU MIXO MIXLO
MDO NMDO +
90 grd
Voltage reference Mixer
RF NRF
I/Q modulator N:1 divider R:1 divider Mode control GND CPC GNDP MUX PFD VSP CPO VS1 VS2 VS3
ND NND RD NRD MC
12494
Figure 1. Block diagram
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-97
1 (14)
Preliminary Information
U2893B
Pin Description
I NI MDLO GND MDO NMDO 1 2 3 4 5 6 28 27 26 25 24 Q NQ VS3 MIXO GND
23 NRF 22 RF 21 VS2
VS1 7 VSP 8 CPO 9
20 MIXLO 19 18 17 16 15
12495
GNDP 10 CPC 11
PU GND NND ND MC
PUMIX 12 RD 13
NRD 14
Figure 2. Pinning
2 (14)
Preliminary Information
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12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 PUMIX RD NRD MC ND NND GND 1) PU MIXLO VS2 3) RF NRF GND 1) MIXO VS3 3) NQ Q
1)
Pin 1 2 3 4 5 6 7 8 9 10 11
Symbol I NI MDLO GND 1) MDO NMDO VS1 3) VSP CPO GNDP 2) CPC
Function In-phase baseband input Complementary to I I/Q-modulator LO input Negative supply I/Q-modulator output Complementary to MDO Positive supply (I/Q MOD) Pos. supply charge-pump Charge-pump output Neg. supply charge pump Charge-pump current control (input) Power-up, mixer only R-divider input Complementary to RD Mode control N-divider input Complementary to ND Negative supply Power-up, whole chip except mixer Mixer LO input Positive supply (MISC.) Mixer RF-input Complementary to RF Negative supply Mixer output Positive supply (mixer) Complementary to Q Quad.-phase baseband input
All GND pins must be connected to GND potential. No DC voltage between GND pins!
2)
Max. voltage between GNDP and GND pins 200 mV
v
3)
The maximum permissible voltage difference between pins VS1, VS2 and VS3 is 200 mV.
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-76
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Thermal Resistance Operating Range
Supply voltage Ambient temperature Parameters Symbol VVS#, VVSP Tamb | ICPC | Tamb Tstg 5 -20 to +85 -40 to +125 Value 2.7 to 5.5 -20 to +85 Unit V C mA C C 1) Tamb = 25C, VS = 2.7 to 5.5 V
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Absolute Maximum Ratings
Parameters Supply voltage VS1, VS2, VS3 Supply voltage charge pump VSP Voltage at any input Current at any input / output pin except CPC CPC output currents Ambient temperature Storage temperature Symbol VVS# VVSP VVi# | II# | | IO# | -0.5
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-97
2)
Electrical Characteristics: General Data
Active (VPU = VS) Standby (VPU = 0) Supply current IVS2 pp y Active (VPU = VS) Standby (VPU = 0) Supply current IVS3 pp y Active (VPUMIX = VS) Standby (VPUMIX = 0) Supply current IVSP 1) Active (VPU = VS, CPO open) Standby (VPU = 0) N & R divider inputs ND, NND & RD, NRD N:1 divider frequency 50-W source R:1 divider frequency 50-W source Input impedance Active & standby Input sensitivity 50-W source
Supply current IVS1 pp y
Parameters DC supply Supply voltages VS# Supply voltage VSP
Parameters Junction ambient SSO28
See chapter "Supply Current of the Charge Pump i(VSP) vs. Time", page 6.
100-MHz PFD operation, pump current set to 4 mA, zero phase difference (steady state)
VVS1 = VVS2 = VVS3
Test Conditions / Pin
Preliminary Information
Symbol RthJA FND FRD ZRD, ZND VRDeff, VNDeff Symbol IVSPY IVS1A IVS1Y IVS2A IVS2Y IVS3A IVS3Y IVSPA VVS# VVSP 2.7 VVS# - 0.3 100 100 1 k 30 Min.
v
vV
5.5 VVS +0.5 2
Value 130
Value
VSP
Typ.
21
16
11
2)
v 5.5
U2893B
Max.
650 400 2 pF 200
5.5 5.5
20
30 20
20
20
Unit K/W
Unit V V V mA
MHz MHz - mV
Unit
mA
mA
mA
mA
mA
mA
mA
mA
V V
3 (14)
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3)
5)
4)
Tamb = 25C, VS = 2.7 to 5.5 V
Electrical Characteristics: General Data (continued)
U2893B
4 (14) Differential (preferres) I/Q modulator LO input MDLO MDLO Frequency range Input impedance Active & standby Input level 50-W source I/Q modulator outputs MDO, NMDO DC current VMDO, VNMDO = VS Voltage compliance VMDO, VNMDO = VC MDO output level 500 W to VS 4) (differential) Carrier suppression 4) Sideband suppression 4) IF spurious 4) f_LO +/- 3 f_mod 4) Noise @ 400 kHz off carrier Frequency range Mixer (900 MHz) RF input level 900 MHz LO-spurious at @ P9MIXLO = -10 dBm RF/NRF port @ P9RF = -15 dBm MIXLO input level 0.05 to 2 GHz MIXO (100-W load) Frequency range ... Output level 5) @ P9MIXLO = -15 dBm ... Carrier suppression @ P9MIXLO = -15 dBm MD_IQ AC voltage 3) Parameters Test Conditions / Pin Phase-frequency detector (PFD) PFD operation FND = 650 MHz, n = 5 FRD = 300 MHz, r = 2 Frequency comparison FND = 650 MHz, n = 5 only FRD = 300 MHz, r = 2 I/Q modulator baseband inputs I, NI & Q, NQ DC voltage Referred to GND -1 dB compression point (CP-1) With typical drive levels at MDLO- & I/Q-inputs Frequency range Referred to GND IMDO, INMDO VCMDO, VCNMDO PMDOeff VI, VNI, VQ, VNQ FRIO ACI, ACNI, ACQ, ACNQ ACDI, ACDQ P9MIXLO FRMIXO P9MIXOeff CS9MIXO Symbol CSMDO SSMDO SPMDO NMDO FRMDO FMDLO ZMDLO PMDLO FMPFD P9RF SP9RF FMFD Min. 1.35 -20 120 200 150 DC tbd 50 tbd 50
Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity degrading suppression of odd harmonics
Preliminary Information
-30 -35 -45 -115 50
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-76 VS1/2 Typ. -10 -15 -35 -40 -50 250 -12 400 200 2.4 70 VS1/2 + 0.1 1 Max. 350 -40 350 150 350 -5 dBc dBc dBc dBc/Hz MHz mVpp MHz mVpp dBm MHz mV dBc MHz W dBm MHz MHz dBm dBm Unit mV mA V
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6)
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-97 Tamb = 25C, VS = 2.7 to 5.5 V See figures 6 and 14.
Electrical Characteristics: General Data (continued)
Charge pump control input CPC Compensation capacitor CCPC Short circuit current 6) CPC grounded | ICPCK | Mode control Sink current VMC = VS IMC Power-up input PU (power-up for all functions, except mixer) Settling time Output power within SPU 10% of steady state values High level Active VPUH Low level Standby VPUL High-level current Active, VPUH = 2.7 V IPUH Low-level current Standby, VPUL = 0.4 V IPUL Power-up input PUMIX (power-up for mixer only) Settling time Output power within 10% of steady state values High level Active VPUMIXH Low level Standby VPUMIXL High-level current Active, VPUMIXH = 2.7 V IPUMIXH Low-level current Standby, IPUMIXL VPUMIXL = 0.4 V
Parameters Test Conditions / Pin Mixer (1900 MHz) RF input level 0.5 to 2 GHz LO-spurious at @ P19MIXLO = -10 dBm RF/NRF ports @ P19RF = -15 dBm MIXLO input level 0.05 to 2 GHz MIXO (100 W load) ... Output level 5) @ P19MIXLO = -17 dBm ... Carrier suppression @ P19MIXLO = -17 dBm Charge pump output CPO Pump current p pulse CPC open p 2.23 k CPC to GND 760 CPC to GND TK pump current Mismatch source / sink (ICPOSI - ICPOSO)/ICPOSI ICPOSO = Isourc current ICPOSI = Isink Sensivity to VSP DI | CPO | | DVSP | VSP I CPO
Preliminary Information
P19MIXO CS19MIXO | ICPO | | ICPO 2 | | ICPO_4 | Tk_| ICPC | MICPO P19MIXLO Symbol P19RF SP19RF SICPO Min. 2.5 0 0.1 -10 2.5 0 0.1 -10 500 2 -20 0.8 1.6 3.6 Typ. -17 2.7 20 55 -8 5 5 1 2 4
U2893B
Max.
-40
0.4 0.6 0
0.4 0.6 0
3.7
0.1
1.2 2.4 4.4 15 10
10
10
mA mA mA %/100 k %
mVeff dBc
dBm
dBm dBm
Unit
V V mA mA
V V mA mA
pF mA
mA
ms
ms
5 (14) -
U2893B
Supply Current of the Charge Pump i(VSP) vs. Time
Due to the pulsed operation of the charge pump, the current into the charge-pump supply pin VSP is not constant. Depending on I (see figure 6) and the phase difference at the phase detector inputs, the current i(VSP) over time varies. Basically, the total current is the sum of the quiescent current, the charge-/discharge current, and - after each phase comparison cycle - a current spike (see figure 3).
Initial Charge Pump Current after Power-Up
Due to stability reasons, the reference current generator for the charge pump needs an external capacitor (>500 pF from CPC to GND). After power-up, only the on-chip generated current I = ICPCK is available for charging the external capacitor. Due to the charge pump's architecture, the charge pump current will be 2 I = 2 ICPCK until the voltage on CPC has reached the reference voltage (1.1 V). The following figures illustrate this behavior. The behavior of I(CPO) after power-up can be very advantageous for a fast settling of the loop. By using larger capacitors (>1 nF), an even longer period with maximum charge pump current is possible.
V(CPC) ICPCK RCPC
up down 5I i(VSP) 3I I t 2I i(CPO) -2I t
Vref
t
1
t
0
t
2
t
Figure 3. Supply current of the charge pump = f(t)
Internal current, I, vs. current out of pin CPC I vs. I(CPC) CPC open 2.23 kW to GND 743 W to GND CPC shorted to GND ICPC 0 -0.5 mA -1.5 mA ICPCK I 0.5 mA 1.0 mA 2.0 mA >2.0 mA
2
I(CPC) ICPCK
I
t
1
t
Time t1 can be calculated as t1 (1.1 V CCPC)/ICPCK e.g., CCPC = 1 nF, Imax = 3.5 A t1 0.3 ms. Time t2 can be calculated as t2 (RCPC/2230 W) CCPC e.g., CCPC = 1 nF, RCPC = 2230 W t2 1.1 ms
Figure 4.
[ [ [ [
6 (14)
Preliminary Information
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-76
U2893B
Mode Selection
The device can be programmed to different modes via an external resistor (including short, open) connected between Pin MC and VS2. The mode selection controls the N-, R-divider ratios, and the polarity of the charge pump current. Mode Selection Mode 1 2 3 4
1)
N-Divider
R-Divider
CPO Current Polarity fN < fR
1)
Application
Resistance between Pin MC and Pin VS2 0 (<50 W) 3:1 2:1 2:1 3:1 3:1 5:1 5:1 6:1 6:1 6:1 2.7 kW (5%) 10 kW (5%) 36 kW (5%)
fN < fR
1)
Sink Source Source Source Sink
Source Sink Sink Sink Source
GSM PCS DCS GSM GSM
5 (>1 MW) Frequencies referred to PFD input!
R
Equivalent Circuits at the IC's Pins
Vbias_MDLO
2230 2230 250
I, Q
MDLO
NI, NQ
Vref_input
Vref_MDLO 30p
Vref_output
Baseband input
LO input Figure 5. I/Q modulator
Output
1k
Vbias_RF
1k Vbias_LO
RF
890
890
1.6k
1.6k
NRF
MIXLO
40p Vref_LO
6.3
Vref_RF
RF input
LO input
Output Figure 6. Mixer
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-97
Preliminary Information
I I I I I I I I I I I I I I I I I I I I I I I
VS3
VS1 MDO NMDO
II II II II II II II I I I I I I
II II II II II II II I I I I I I
GND
MIXO
GND
7 (14)
U2893B
VS2 4 4
I
ICPCK /4
gm
4
CPC
up
1.1 V 2230 ref ref
down
2I 2I
2
2
GND
n
= Transistor with an emitter area-factor of n
Figure 7. Charge pump
VS2
PU, PUMIX
20k
ND/RD
2k
2k
NND/NRD
Figure 9. Power-up
Vref_div
GND
Figure 8. Dividers VS2
C (U) 2.5 pF @ 2 V N-divider Logic Figure 11. ESD-protection diodes R-divider MUX
60 m A
MC
GND
Figure 10. Mode control
8 (14)
Preliminary Information
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-76
II II II II II II II II
I I I I I I I I I I I
I I I I I I
I I I I I I I I I I I I
I I I I I I
I I I I I I I I I I I I I I I I I I I I I I
VSP
CPO
GNDP
GND
^
U2893B
Application Hints
For some of the baseband ICs it may be necessary to reduce the I/Q voltage swing so that it can be handled by the U2893B. In those cases, the following circuitry can be used.
R1 I R2 NI Baseband IC Q R1 NQ R1
12496
U2893B
GND CPC R1 = 2230 R R1 R2 R2 = 1160 R (incl. rds_on of FET) 4 mA
I
1 nF
R1
NI Q R2 NQ
U2893B
2 mA
12497
Figure 14. Programming the charge pump current
Figure 12. Interfacing the U2893B to I/Q baseband circuits
Application examples for programming different modes.
U2893B VS2 RMODE U2893B VS2
MC RMODE 1 RMODE 2
MC
a) single mode U2893B VS2 RMODE
b) any mode & mode 5 U2893B VS2
MC MC RMODE 36k or 10k d) mode 5 & mode 3 or mode 4 Figure 13. Mode control
c) any mode
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-97
9 (14)
Preliminary Information
U2893B
Test Circuit
<450 mVpp <450 mVpp
VAC VAC
Baseband inputs 1.35 V - VS1/2 + 0.1 V VDC I NI MDLO GND MDO NMDO VS1 VSP CPO GNDP CPC PUMIX RD NRD
VDC
1.35 V - VS1/2 + 0.1 V
Modulator LO input Modulator outputs VS VSP VDO PFD Pulse output
50
50 50 1n
50
6 7 8 9 10 11 12 13 14
PFD input
50
Power-up Bias voltage for VS charge pump output: 0.5 V < VDO < VSP - 0.5 V
10 (14)
Preliminary Information
I I
1 2 3 4 5
Q NQ VS3 MIXO GND NRF RF VS2 MIXLO PU GND NND ND MC
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VS
Mixer output Mixer input
50 VS
Mixer LO input
PFD input 50
Mode control VS2
R1 R2 R3
13315
Figure 15. Test circuit
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-76
U2893B
Application Circuit (900 MHz)
Baseband processor
27n 200 2.7 to 3.5 V I Dr Dr 4.7p MDO NMDO 47nH 47nH ND Charge pump 1k NND RD f_Ref vrms = 55 mV NRD MC 50 R:1 divider N:1 divider MUX PFD + I/Q modulator
90 grd
12p
12p MIXO
LO (-10 dBm) 1192 MHz
NI MDLO
Q NQ
PUMIX PU
MIXLO
RF Voltage reference NRF Mixer 50 390 6 dB attn. VCO MQE 550 VSP 2.7 to 3.5 V 10 To PA
CPO 68p VS1 VS2 VS3
3.3n 390 2.7 to 3.5 V
Mode control GND
U2893B
CPC
GNDP
13316
Figure 16. Power-up, charge pump control, and mode control must be connected according to the application used
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-97
11 (14)
Preliminary Information
U2893B
Measurements
Modulation-Loop Settling Time
As valid for all PLL loops the settling time depends on several factors. The following figure is an extraction from measurements performed in an arrangement like the application circuit. It shows that a loop settling time of a few ms can be achieved.
CPC: 1 k to GND
Modulation Spectrum & Phase Error
The figure of the TX spectrum and the phase error distribution, respectively, shows the suitability of the modulation-loop concept for GSM. Vertical: VRef. level = 28.6 dBm, 10 dBm/Div Horizontal: Center = 900 MHz, VBW, RBW = 30 kHz, 400 kHz/Div
CPC `open'
Vertical: VCO tuning voltage 1 V/Div Horizontal: Time 1 ms/Div
Figure 17. Figure 18.
Figure 19.
12 (14)
Preliminary Information
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-76
U2893B
Package Information
Package SSO28
Dimensions in mm
9.10 9.01 5.7 5.3 4.5 4.3
1.30 0.25 0.65 8.45 28 15 0.15 0.05 6.6 6.3 0.15
technical drawings according to DIN specifications
13018
1
14
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-97
13 (14)
Preliminary Information
U2893B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
14 (14)
Preliminary Information
TELEFUNKEN Semiconductors Rev. A1, 29-Jan-76

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